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APTM100AM90F
Phase leg MOSFET Power Module
VBUS Q1
VDSS = 1000V RDSon = 90m typ @ Tj = 25C ID = 78A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
G1 OUT S1 Q2
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
S2
0/VBUS
* * *
VBUS 0/VBUS OUT
G1 S1
Benefits * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100AM90F- Rev 1
Max ratings 1000 78 59 312 30 105 1250 25 50 3000
Unit V A V m W A mJ
May, 2005
APTM100AM90F
All ratings @ Tj = 25C unless otherwise specified
Symbol IDSS RDS(on) VGS(th) IGSS
Electrical Characteristics
Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Test Conditions
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Min
Typ
VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
90 3
Max 1 3 105 5 250
Unit mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 78A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 78A R G =1.2 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2
Min
Typ 20.7 3.5 0.64 744 96 488 18 12 155 40 3.6 2.5 5.7 3.1
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 78A IS = - 78A VR = 500V diS/dt = 400A/s IS = - 78A VR = 500V diS/dt = 400A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 14.4 38.9
Max 78 59 1.3 18 320 650
Unit A V V/ns ns C
APT website - http://www.advancedpower.com
2-6
APTM100AM90F- Rev 1
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 78A di/dt 700A/s VR VDSS Tj 150C
May, 2005
APTM100AM90F
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.1 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100AM90F- Rev 1
May, 2005
APTM100AM90F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 240
V GS=15, 10&8V
Transfert Characteristics 320 280 ID, Drain Current (A) 240 200 160 120 80 40 0 30 0 1 2 3 4 5 TJ =25C TJ =125C TJ =-55C 6 7 8 9
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
200 160 120 80 40 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 39A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150
May, 2005
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V
VGS=20V
40
80
120
160
200
240
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
4-6
APTM100AM90F- Rev 1
APTM100AM90F
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC)
May, 2005
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=39A
1000
100s limited by R DSon
100
1ms
10 Single pulse TJ =150C 1 1 10 100 1000 VDS , Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage ID=78A TJ=25C
VDS=200V V DS =500V V DS=800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM100AM90F- Rev 1
APTM100AM90F
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current
V DS=670V RG =1.2 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=670V RG=1.2 TJ=125C L=100H
t d(off) tr and tf (ns)
tf
60
40 tr 20
td(on)
0 20 40 60 80 100 120 140 160 I D, Drain Current (A)
Switching Energy vs Gate Resistance 14 Switching Energy (mJ) 12 10 8 6 4 2 0 0 2 4 6 8 Eon
V DS=670V ID=78A T J=125C L=100H
10
Switching Energy (mJ)
8 6 4 2 0 20
VDS=670V RG=1.2 TJ=125C L=100H
Eon
Eoff
Eoff
40
60
80
100 120 140 160
I D, Drain Current (A) Operating Frequency vs Drain Current
ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
250 200 Frequency (kHz)
ZCS
100
TJ=150C TJ=25C
150 100 50 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70
VDS=670V D=50% RG=1.2 T J=125C T C=75C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
May, 2005
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM100AM90F- Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein

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